Note
College of Engineering and Computer Science
Member of
Contributors
Publisher
Florida Atlantic University
Date Issued
2008
EDTF Date Created
2008
Description
Ultra-Wide band (UWB) systems are a new wireless technology capable of transmitting
data over a wide spectrum of frequency bands with very low power and high data rates.
This technology has the potential to replace almost every cable at home or in an office
with a wireless connection. In a UWB receiver, a radio frequency (RF) low noise
amplifier (LNA) is one of the most important components. This thesis discusses the entire
process involving the design ofUWB low noise amplifiers including a detailed stage by
stage analysis of a computer aided design (CAD) of a MOSFET UWB LNA. Simulation
tools and concepts from Level I equations are used in order to design a circuit with a
realistic MOS model such as the BSIM3 used in this work. The LNA shows improved
power consumption over the designs it is based on while still producing comparable
results.
data over a wide spectrum of frequency bands with very low power and high data rates.
This technology has the potential to replace almost every cable at home or in an office
with a wireless connection. In a UWB receiver, a radio frequency (RF) low noise
amplifier (LNA) is one of the most important components. This thesis discusses the entire
process involving the design ofUWB low noise amplifiers including a detailed stage by
stage analysis of a computer aided design (CAD) of a MOSFET UWB LNA. Simulation
tools and concepts from Level I equations are used in order to design a circuit with a
realistic MOS model such as the BSIM3 used in this work. The LNA shows improved
power consumption over the designs it is based on while still producing comparable
results.
Language
Type
Form
Extent
138 p.
Subject (Topical)
Identifier
FA00012510
Additional Information
College of Engineering and Computer Science
Thesis (M.S.)--Florida Atlantic University, 2008.
FAU Electronic Theses and Dissertations Collection
Date Backup
2008
Date Created Backup
2008
Date Text
2008
Date Created (EDTF)
2008
Date Issued (EDTF)
2008
Extension
FAU
IID
FA00012510
Organizations
Attributed name: Florida Atlantic University
Person Preferred Name
Camacho, Esteban
Graduate College
Physical Description
application/pdf
138 p.
Title Plain
Design ofMOSFET ultra-wideband low noise amplifiers
Use and Reproduction
Copyright © is held by the author with permission granted to Florida Atlantic University to digitize, archive and distribute this item for non-profit research and educational purposes. Any reuse of this item in excess of fair use or other copyright exemptions requires permission of the copyright holder.
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Origin Information
2008
2008
Florida Atlantic University
Boca Raton, Fla.
Physical Location
Florida Atlantic University Libraries
Place
Boca Raton, Fla.
Sub Location
Digital Library
Title
Design ofMOSFET ultra-wideband low noise amplifiers
Other Title Info
Design ofMOSFET ultra-wideband low noise amplifiers