Dislocation reduction in gallium arsenide crystals grown from Czochralski process

The dislocation density in the Gallium Arsenide (GaAs) crystal is generated by the excessive thermal stresses during Czochralski (CZ) growth process. A constitutive equation which couples the dislocation density with the plastic deformation is employed to simulate the dislocation density in the crystal. The temperature distribution in the crystal during growth process is obtained by solving the quasi-steady-state (QSS) heat transfer equation. The thermal stresses induced by the temperature distribution are calculated by finite element method. The resolved shear stress (RSS) in each slip system is obtained by stress transformation. The dislocation motion and multiplication in each slip system are simulated using the constitutive equation and the total dislocation density in the crystal is obtained. The dislocation density is also found to be affected by the growth orientation, growth speed, ambient temperature and the radius of the crystal. The dislocation density in GaAs crystals grown from different growth orientation and crystal radius at various ambient temperatures will be calculated so that the influence of these growth parameters on the dislocation density can be understood. Consequently, one can control the growth parameters to reduce the dislocation density generated in the crystal during the CZ growth process.