Narrow and broad band photoluminescence spectroscopy of Cd(x)Zn(1-x)Se semiconductor

In this dissertation I have used photoluminescence (PL) spectrometric analysis to measure the temperature dependence of the spectral features of the direct band gap semiconductor CdxZn1-xSe , for two nominal concentrations x = 0.25, 0.50, in the temperature range 25--300 K. The effective concentrations were obtained from analysis of the spectra. The parameters that describe the temperature dependence of the line width broadening have been evaluated using different models. The PL broadband characteristics of Cd0.22Zn0.78Se and Cd0.41Zn0.59Se are also investigated within the energy range 1.36--2.40 eV and temperature range 25--305 K. Two broad bands are observed, the higher energy band I centered at 1.991 and 1.773 eV, the lower energy band II centered at 1.844 and 1.705 eV for the two samples, respectively. The emission bands are attributed to donor-acceptor pair transitions. The energy scheme shows two donors and two acceptor levels, the binding energies of the donors for Cd 0.22Zn0.78Se are 29 and 208 meV below the conduction band, the binding energies of the acceptors 472 and 511 meV above the valence band. The binding energies of the donors for Cd0.41Zn 0.59Se are 27 and 137 meV, the binding energies of the acceptors 393 and 423 eV. A significant blue shift in energy with increasing temperature was observed for the lower energy band. The ionization temperatures for the deep donors are 279 and 287 K for Cd0.22Zn0.78Se and Cd0.41Zn0.59Se, respectively.