Note
Thesis (M.S.)--Florida Atlantic University, 1973.
Member of
Contributors
Publisher
Florida Atlantic University
Date Issued
1973
Description
Measurements of the Hall Effect and conductivity at between 20 and 500K
and optical absorption measurements at 77 and 20K have completed the
characterization of manganese as a deep acceptor in gallium arsenide.
The photo-ionization cross-section maxium (about 8.5x10^-17 cm^2) agreed
well with the Lucovsky delta function potential model, while the
spectral dependence agreed best with the quantum defect model with a
coulomb continuum final state. Impurity concentrations and activation
energies were determined from Hall Effect data and the correlation of
activation energy with Na and Nd determined. Impurity conduction
appearing below 100K was characterized in heavily doped (Na = 2x10^19 cm^-3 )
a moderately compensated (K=0.1) samples. Both metallic type impurity
conduction and the thermally activated type were seen. AMott
transition was found that occurs within a very narrow range of impurity
concentrations.
and optical absorption measurements at 77 and 20K have completed the
characterization of manganese as a deep acceptor in gallium arsenide.
The photo-ionization cross-section maxium (about 8.5x10^-17 cm^2) agreed
well with the Lucovsky delta function potential model, while the
spectral dependence agreed best with the quantum defect model with a
coulomb continuum final state. Impurity concentrations and activation
energies were determined from Hall Effect data and the correlation of
activation energy with Na and Nd determined. Impurity conduction
appearing below 100K was characterized in heavily doped (Na = 2x10^19 cm^-3 )
a moderately compensated (K=0.1) samples. Both metallic type impurity
conduction and the thermally activated type were seen. AMott
transition was found that occurs within a very narrow range of impurity
concentrations.
Language
Type
Form
Extent
107 p.
Subject (Topical)
Identifier
13545
Additional Information
Thesis (M.S.)--Florida Atlantic University, 1973.
Date Backup
1973
Date Text
1973
Date Issued (EDTF)
1973
Extension
FAU
FAU
admin_unit="FAU01", ingest_id="ing1508", creator="staff:fcllz", creation_date="2007-07-19 01:14:56", modified_by="super:SPATEL", modification_date="2011-01-06 13:08:57"
IID
FADT13545
Issuance
monographic
Organizations
Attributed name: Florida Atlantic University
Person Preferred Name
WOODBURY, DUSTIN ALEXANDER
Graduate College
Physical Description
107 p.
application/pdf
Title Plain
CHARACTERIZATION OF MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE
Use and Reproduction
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Origin Information
1973
monographic
Boca Raton, Fla.
Florida Atlantic University
Physical Location
Florida Atlantic University Libraries
Place
Boca Raton, Fla.
Sub Location
Digital Library
Title
CHARACTERIZATION OF MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE
Other Title Info
CHARACTERIZATION OF MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE