Model
Digital Document
Publisher
Florida Atlantic University
Description
Measurements of the Hall Effect and conductivity at between 20 and 500K
and optical absorption measurements at 77 and 20K have completed the
characterization of manganese as a deep acceptor in gallium arsenide.
The photo-ionization cross-section maxium (about 8.5x10^-17 cm^2) agreed
well with the Lucovsky delta function potential model, while the
spectral dependence agreed best with the quantum defect model with a
coulomb continuum final state. Impurity concentrations and activation
energies were determined from Hall Effect data and the correlation of
activation energy with Na and Nd determined. Impurity conduction
appearing below 100K was characterized in heavily doped (Na = 2x10^19 cm^-3 )
a moderately compensated (K=0.1) samples. Both metallic type impurity
conduction and the thermally activated type were seen. AMott
transition was found that occurs within a very narrow range of impurity
concentrations.
and optical absorption measurements at 77 and 20K have completed the
characterization of manganese as a deep acceptor in gallium arsenide.
The photo-ionization cross-section maxium (about 8.5x10^-17 cm^2) agreed
well with the Lucovsky delta function potential model, while the
spectral dependence agreed best with the quantum defect model with a
coulomb continuum final state. Impurity concentrations and activation
energies were determined from Hall Effect data and the correlation of
activation energy with Na and Nd determined. Impurity conduction
appearing below 100K was characterized in heavily doped (Na = 2x10^19 cm^-3 )
a moderately compensated (K=0.1) samples. Both metallic type impurity
conduction and the thermally activated type were seen. AMott
transition was found that occurs within a very narrow range of impurity
concentrations.
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