Note
PATENT STATUS: Granted. A large capacity, solid-state memory device is disclosed in which information is stored in a plurality of large-area arrays of memory cells, each of which is a crossed-wire matrix of memory cells fabricated in a continuous process on a thin flexible substrate, using thin film transistor technology, to form an elongate tape. The plurality of tapes are assembled into a compact package by winding them, one upon the other, into a spool, which is placed in a suitable housing which for apparatus having a storage capacity of one terabit has a volume of about 100 cubic inches.