prediction of dislocation generation during gallium arsenide crystal growth

File
Contributors
Publisher
Florida Atlantic University
Date Issued
1991
Description
Thermal stresses are induced by temperature variations in gallium arsenide(GaAs) crystal growth. The thermal stresses cause plastic deformations by dislocation and dynamic interaction in the crystal. In this study, firstly the temperature distribution in the Czochralski technique (CZ) growth of GaAs crystal is obtained according to the Jordan model. Secondly a visco-plastic response function for the GaAs crystal is developed from the Haasen model. Finally a nonlinear finite element model is employed to simulate the dislocation generation during CZ growth of GaAs crystal.
Note

College of Engineering and Computer Science

Language
Type
Extent
71 p.
Identifier
14780
Additional Information
College of Engineering and Computer Science
FAU Electronic Theses and Dissertations Collection
Thesis (M.S.)--Florida Atlantic University, 1991.
Date Backup
1991
Date Text
1991
Date Issued (EDTF)
1991
Extension


FAU
FAU
admin_unit="FAU01", ingest_id="ing1508", creator="staff:fcllz", creation_date="2007-07-19 03:08:58", modified_by="staff:fcllz", modification_date="2011-01-06 13:09:13"

IID
FADT14780
Issuance
monographic
Person Preferred Name

Liu, Ping.
Graduate College
Physical Description

71 p.
application/pdf
Title Plain
prediction of dislocation generation during gallium arsenide crystal growth
Use and Reproduction
Copyright © is held by the author, with permission granted to Florida Atlantic University to digitize, archive and distribute this item for non-profit research and educational purposes. Any reuse of this item in excess of fair use or other copyright exemptions requires permission of the copyright holder.
http://rightsstatements.org/vocab/InC/1.0/
Origin Information

1991
monographic

Boca Raton, Fla.

Florida Atlantic University
Physical Location
Florida Atlantic University Libraries
Place

Boca Raton, Fla.
Sub Location
Digital Library
Title
prediction of dislocation generation during gallium arsenide crystal growth
Other Title Info

The
prediction of dislocation generation during gallium arsenide crystal growth