Model
Digital Document
Publisher
Florida Atlantic University
Description
Thermal stresses are induced by temperature variations in gallium arsenide(GaAs) crystal growth. The thermal stresses cause plastic deformations by dislocation and dynamic interaction in the crystal. In this study, firstly the temperature distribution in the Czochralski technique (CZ) growth of GaAs crystal is obtained according to the Jordan model. Secondly a visco-plastic response function for the GaAs crystal is developed from the Haasen model. Finally a nonlinear finite element model is employed to simulate the dislocation generation during CZ growth of GaAs crystal.
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